Reactive ion etch (RIE) / Inductively coupled plasma (ICP)
Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based materials and GaAs.
Also good for surface treatment, and substrate cleaning.
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Engineering Center, ECEE271