Instrument/ServiceType:
Reactive ion etch (RIE) / Inductively coupled plasma (ICP)
Instrument Description:
Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based materials and GaAs.
Also good for surface treatment, and substrate cleaning.
Primary Contact:
Tzu-Min Ou
Email id: cnl@colorado.edu
Instrument Location:
Engineering Center, ECEE271