Plasma dry etch

Instrument/ServiceType:

Reactive ion etch (RIE) / Inductively coupled plasma (ICP)

Instrument Description:

Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based materials and GaAs. 

Also good for surface treatment, and substrate cleaning.

Primary Contact:

Tzu-Min Ou

Email id: cnl@colorado.edu

Instrument Location:

Engineering Center, ECEE271