2nd course in the Semiconductor Devices Specialization

Instructor: Wounjhang Park, Ph.D., Professor

This course presents in-depth discussion and analysis of pn junction and metal-semiconductor contacts including equilibrium behavior, current and capacitance responses under bias, breakdown, non-rectifying behavior, and surface effect.

Prior knowledge needed: ECEA 5630 Semiconductor Physics, Introductory physics including electromagnetics and modern physics and Introductory calculus and ordinary differential equations

### Learning Outcomes

• Analyze pn junction at equilibrium and under bias, capacitance and current characteristics, and breakdown behavior.
• Analyze metal-semiconductor contact at equilibrium and under bias, capacitance and current characteristics, non-rectifying contact and surface effects.
• Work through sophisticated analysis and application to electronic devices.

### Syllabus

Duration: 4 hours

In this module, we look at pn junction in equilibrium. Topics include: Device structure for pn junction, Energy band diagram at equilibrium for pn junction, Depletion approximation for step junction, Poisson's equation for step junction, Energy band diagram of pn step junction, Beyond depletion approximation, Poisson's equation, Energy band diagram for linearly graded junction, Energy band diagram for heterojunction, and Effect of band alignment for heterojunction.

Duraton: 4 hours

In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, Avalanche breakdown, Avalanche breakdown voltages, Tunneling current, Zener breakdown, Energy band diagram of pn junction under forward bias, Continuity equation, Boundary conditions, Ideal diode equation, Long- and short-base diodes, Recombination and generation in the depletion region, Non-ideal current, Effect of band alignment, and Diffusion and thermionic emission currents.

Duration: 4 hours

In this module on metal-semiconductor contacts, we will cover the following topics: Device structure, Equilibrium energy band diagram, Electrostatic analysis, Energy band diagram under bias, Capacitance-voltage characteristics, Image charge, Dependence of barrier height on the electric field, Energy band diagram of Schottky contact under bias, Thermionic emission current, Ohmic contact by heavy doping in semiconductor, Ohmic contact by low metal work function, Surface states, Fermi level pinning.

Duration: 3 hours

In this module on LEDs, we will cover the following topics: Basic operating principles of LEDs, Survey of LEDs, Blue LED and solid state lighting, Basic principle of semiconductor laser, Condition for net stimulated emission, Types of semiconductor laser, Photodiode, Avalanche photodiode, Solar cell operating principle, and I-V characteristics and power output.

Duration: 2 hours

Final exam for this course.

##### Assignment

Peer Review: Pin Junction

6%

Homework #1

12%

Homework #2

12%

Peer Review: Ohmic Contact

6%

Homework #3

12%

Homework #4

12%

Final Exam

40%

A

95%

A-

90%

B+

85%

B

80%

B-

75%

C+

70%

C

65%

C-

60%

D+

55%

D

50%

F

0%