Facilities

Model: DWL 66FS

The Heidelberg DWL 66FS is a laser lithography system capable of writing up to 8 x 8 inches and direct writing patterns on wafers, with critical dimension down to 1 µm. Readable formats are DXF, HPGL, Gerber, GDSII, or CIFI

Model: Photonic GT2

Nanoscribe's Photonic Professional GT2 uses Two-Photon Polymerization (2PP) to produce filigree structures of nearly any 3D shape by high-precision 3D printing: crystal lattices, porous scaffolds, naturally inspired patterns, smooth contours, sharp edges, undercuts and bridges are all manufacturable with high resolution. More than a thousand successful research projects by Nanoscribe customers and system users are evidence of the power of two-photon lithography.

Printing technology:    Layer-by-layer Two-Photon Polymerization

Minimum XY feature size:    160 nm typical; 200 nm specified*

Finest XY resolution:    400 nm typical; 500 nm specified*

Finest vertical resolution:    1,000 nm typical; 1,500 nm specified*

Layer distance:    variable, 0.1 – 5.0 µm*

Maximum object height:    8 mm*

Build volume:    100 × 100 × 8 mm³ *

Minimum surface roughness Ra:    ≤ 20 nm*

Max. scan speed:        from 100 to 625 mm/s*

* Values may vary depending on the Solution Set, objective or photoresin in use

Model: CVC SC-300

Two boat thermal evaporator which can accomodate boats ranging from 1.875" up to 4 inches. Horizontal stage does not rotate. Base pressure ranges from 5e-6 to 2e-5 via cryopump. Manually opperated power suply, shutter, and crystal quartz monitor. This chamber is open to most materials with little restrictions.

Model: Karl Suss MJB3

Contact mask aligner for patterning 2 inch wafers and wafer pieces. Accepts 4x4 inch photomasks. CDs down to 1 micron possible (2.5 micron or larger reccomended) and alignement tolerences < 1 micron is achievable.  Hard contact, soft contact, and vacuum mode (vacuum mode only avalable for small substrate pieces). 5x, 10x, 20x objectives for topside alignment.

Model: March Jupiter 3

300 Watt, 13.56 MHz, Oxygen plasma asher used for wafer descumming and surface prep with pressures typically ranging from 100-500 mT. Chamber has a 5 inch diameter lower electrode that can accomodate wafer pieces and full wafers up to 4 inches.

Model: PlasmaTherm Shuttle Lock

Inductively coupled plasma tool plumbed with Cl2, BCl3, O2, CHF3, Ar, N2. This tool is currently restricted to III-V materials. Mechanical clamp accepts 4 inch wafers, smaller wafers or wafer pieces can be mounted to 4 inch carrier wafers. He backside cooling is available.  

ICP generator: 2000 W at 2 MHz
RF generator: 600 W at 13.56 MHz
Platen temperature 20C to 40C
Chamber Temp 20c to 100C

Model: Laurell

2 Laurell spin coaters for coating substrates with photoresists and resins. One spinner is dedicated to e-beam lithography resists while one is open for general use. 100-6000 rpms are capable with multi step programming. Solvent spinning is not allowed.

Model: Dektak 6m

Stylus profilometer capable of measuring features 50 nanometers to 100 microns. 12.5 micron stylus radius with adjustable stylus force.

Model: Olympus AX70

Optical microscope with 5x, 10x, 20x, 50x, and 100x objectives. Bright field, dark field, and backside imaging modes. 10x magnification on eye pieces. AmScope camera connected to an imaging pc for saving color images and video at 2048x1536 resolution. Calibrated measureing using the imaging software.

Model: Beneq TFS-200

Thermal ALD used to grow oxides of Ti, Al, Sn, and Zn, and combinations thereof using the associated metal precursors and either water (precursor bubbler) or ozone (generated on the tool).

Precursors include Trimethylaluminum (TMA), Water, Titanium tetrachloride (TTC), Diethylzinc (DEZ), (Tetrakis)dimethylamido tin (IV) (TDMA-Sn), and Oxygen/Ozone

Model: PlasmaTherm Vision 320 

Anticipated install date winter 2023. RIE chmber designed for low to medium density plasmas. 12 inch diameter platten can accomodate full wafers or wafer pieces, maximum wafer size 280 mm. 600 watt, 13.56 MHz, RF plasma. Temperature control of lower electrobe between 5 and 40 C ± 3 C. Optical emission endpoint etch monitoring for endpoint detection and allowing automated process control of target etch depth repeatable to < ± 2%
(run-to-run). Plumed with CF4, CHF3, SF6, O2, N2

Model: Angstrom Engineering

Anticipated install date spring/summer 2024. 

Combination electron beam evaporator and sputter tool. 

6x7cc pocket e-beam evporatoration with a 6 kW (10 kV - 600 mA) solid state power supply. Programmable sweep pattern and rate control. 

Two 3-inch sputter targets. 

1.0 kW solid state pulsed DC power supply capable of running in DC or pulsed DC mode, 0 - 100 kHz pulse frequency, 0 - 800 V | 0 - 2.5 A. 

600 W RF Power Supply and Matching Network, 13.56 MHz power supply with automatic matching network.

Rotating substrate stage with temperature control from ambient to 600C, height control, and up to 100 W RF bias

Model: Raith EBPG5150plus

Anticipate install date summer/fall 2024. 100 kV Electron Beam,125 MhZ pattern generator, linewidth < 8 nm, stitch accuracy < 8 nm, overlay accuracy < 5 nm, max, field size of 1.048 mm

Model: Kinetics

2 stainless steel solvent processing benches are available for wafer prep, cleaning, and lithographic developing and resist stripping. Both benches have hot plates, DI water sinks and sprayers, and nitrogen guns available. The left bech also has a heated sonnicator with two power levels and can hold 250 mL beakers. 

Model: Kinetics

2 polypropylene benches used for wet etching using acids and bases. No piranha or HF allowed, however the shelf stable nanostrip is allowed and stocked as a safer piranha alternative. Both benches are equiped with DI water sinks and sprayers as well as nitrogen guns.