Atomic Layer Deposition (ALD) Enabled Nano Electromechanical Systems (NEMS)
PIs: Victor M. Bright, Steven George
Student: Bradley Davidson, Harris Hall, Keith Cobry, Xiaohue Du, Chris Wilson
Project field/specialty: ALD, NEMS
Project Description:Atomic layer deposition (ALD) is a self-limiting process that enables accurate atomic-scale thickness control as well as the deposition of various materials under a multitude of processing conditions at temperatures lower than 200 oC. This makes ALD an ideal candidate for depositing coatings or structural/mechanical layers in MEMS and nano electromechanical systems (NEMS). For this study, we are developing a fabrication process to demonstrate that ALD can be used as a structural layer and can be compatible with standard IC processing. Alumina, zinc oxide, and tungsten are just a few of the materials being studied.The images below (Courtesty of M.K. Tripp, 2005) show devices previously developed using ALD of alumina. The first image shows the SEM of an alumina nano cantilever while alumina test nano-scale structures are shown in the second set of images.
References:
- Tripp, M.K.; Stampfer, C.; Herrmann, C.F.; Hierold, C.; George, S.; Bright, V.M., "Low stress atomic layer deposited alumina for nano electro mechanical systems," Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on Volume 1, 5-9 June 2005 Page(s):851 - 854 Vol. 1
Funding Source: Defense Advanced Research Projects Agency (DARPA)
